Effects of aluminum on epitaxial graphene grown on C-face SiC

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained aft...

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscop...

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

SiC surface orientation and Si loss rate effects on epitaxial graphene

We have explored the properties of SiC-based epitaxial graphene grown in a cold wall UHV chamber. The effects of the SiC surface orientation and silicon loss rate were investigated by comparing the characteristics of each formed graphene. Graphene was grown by thermal decomposition on both the silicon (0001) and carbon (000-1) faces of on-axis semi-insulating 6H-SiC with a "face-down" and "face...

Micro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4H-SiC(0001) substrate K.Grodecki

It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...